R. D. Burnham

发表

Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices

N. Holonyak, R. Kaliski, K. Hsieh, 1985 .

Impurity-induced disordering in multilayer structures

N. Holonyak, R. Thornton, T. Paoli, 1986 .

Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

N. Holonyak, R. Kaliski, M. Feng, 1987 .

Implantation disordering of AlxGa1−xAs superlattices

N. Holonyak, D. Deppe, R. Burnham, 1985 .

Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers

N. Holonyak, M. Feng, P. Gavrilovic, 1985 .

Opto-electronic device structures fabricated by impurity induced disordering

N. Holonyak, D. Deppe, R. Thornton, 1986 .

Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures

N. Holonyak, D. Nam, P. Gavrilovic, 1988 .

Growth and characterization of AlGaAs/GaAs quantum well lasers

N. Holonyak, W. Streifer, T. Paoli, 1984 .

Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation

G. Stillman, N. Holonyak, M. Feng, 1987 .

Quantum well laser operation at low temperature in strong magnetic fields

N. Holonyak, W. Streifer, R. Burnham, 1983 .

Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si

N. Holonyak, D. Nam, J. Lee, 1987 .

Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures

N. Holonyak, R. Dupuis, J. Dallesasse, 1990 .

High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation

N. Holonyak, D. Scifres, K. Hess, 1982 .