B. Pruniaux

发表

Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer

A. C. Adams, B. Pruniaux, 1972 .

The cover-basement contact beneath the Rawil axial depression (western Alps): True amplitude seismic processing, petrophysical properties, and modelling

S. Sellami, J. Epard, R. Olivier, 1994 .

Processing and preliminary results of NFP/PNR20 seismic reflection profiles from the Western Swiss Alps

S. Sellami, R. Olivier, J. Wagner, 1993 .

Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor System

B. Pruniaux, 1971 .

Gallium Arsenide Surface Film Evaluation by Ellipsometry Its Effect on Schottky Barriers

A. C. Adams, B. R. Pruniaux, B. Pruniaux, 1973 .

Oxidized aluminium for passive thin-film circuits

B. Pruniaux, I. Melnick, G. Grunberg, 1968 .

Preliminary investigations of Reactively Evaporated Aluminum Oxide Films on Silicon

B. Pruniaux, E. Ferrieu, 1969 .

COMPENSATION OF N-TYPE GaAs BY PROTON BOMBARDMENT.

G. L. Miller, J. North, B. Pruniaux, 1971 .

A semi-insulated gate gallium-arsenide field-effect transistor

J. North, B. Pruniaux, A. Payer, 1972 .