V. Nakov

发表

Properties of a high-mobility two-dimensional electron gas in modulation-doped quantum well structures of GaInAs/AIInAs and GaInAs/(Ga1-xAlx)InAs heterostructures

G. Gobsch, W. Kraak, D. Schulze, 1994 .

Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

G. Gobsch, R. Goldhahn, R. Goldhahn, 2002 .

Far‐infrared intersubband transitions in a two‐dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

J. M. Chamberlain, M. Henini, G. Gobsch, 1996 .

Saturation absorption studies of intersubband relaxation rates in a p-GaAs/AlGaAs QW using a free electron laser

J. M. Chamberlain, M. Henini, B. Murdin, 1998 .

Silicon-on-Insulator Circuits for Application at High Temperatures

V. Schulze, V. Nakov, D. Nuernbergk, 2005 .

Modified Thomas-Fermi approximation a surprisingly good tool for the treatment of semiconductor layer structures including various two-dimensional systems

M. Trott, S. Trott, V. Nakov, 1993 .

Modelling of the electronic structure for an AlGaAs/GaAs/AlGaAs HFET with a δ-doping layer inside the quantum well

G. Gobsch, R. Goldhahn, S. Trott, 1993 .

Modelling of single barrier heterostructures including band bending and non-parabolicity effects of the band structure

M. Trott, C. Schnittler, M. Kirilov, 1995 .