I. D'Haenens

发表

Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy

April Brown, H. Griem, G. Wicks, 1987 .

Stimulated Optical Emission in Fluorescent Solids. II. Spectroscopy and Stimulated Emission in Ruby

C. K. Asawa, I. J. D'Haenens, R. H. Hoskins, 1961 .

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

M. Feng, V. Eu, M. Braunstein, 1982 .

Surface-Barrier Analysis for Rhenium from Periodic Deviations in the Thermionic Schottky Effect

I. D'Haenens, E. Coomes, 1966 .

Photoreflectance of GaAs doping superlattices

Fred H. Pollak, Arthur L. Smirl, P. Parayanthal, 1986 .

Stimulated and Fluorescent Optical Emission in Ruby from 4.2° to 300°K: Zero-Field Splitting and Mode Structure

C. Asawa, I. D'Haenens, 1962 .

Germanium Surface Cleaning—An Auger Analysis

D. Kiewit, J. A. Roth, I. D'Haenens, 1974 .

The effect of aluminum composition on silicon donor behavior in AlxGa1−xAs

I. D'Haenens, L. Salmon, 1984 .

PAPER 10 – Microwave Generation in Ruby due to Population Inversion produced by Optical Absorption†*

C. Asawa, D. Devor, I. D'Haenens, 1970 .