Hanghai Du

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Jincheng Zhang, Yue Hao, Tao Zhang, 2022, Applied Physics Letters.

Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Y. Hao, Jincheng Zhang, Xingchang Fu, 2020 .

Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure

Jincheng Zhang, Zhihong Liu, Hong Zhou, 2022, Applied Physics Letters.

High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2023, IEEE Electron Device Letters.

High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage

Jincheng Zhang, Zhihong Liu, Yue Hao, 2022, IEEE Electron Device Letters.

High-Density 2D Hole Gas in P-GaN/AlN/AlGaN on A Silicon Substrate with Polarization-Enhanced Mg Ionization

Jincheng Zhang, Jing Ning, Yue Hao, 2023, Fundamental Research.