H. Levy

0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz

R. C. Tiberio, E. D. Wolf, Lester F. Eastman, 1988 .

High Performance 0.5 and 0.25 μm Gate GaAs Mesfet Grown by MOCVD Using Tertiarybutylarsine

L. Fraas, V. Sundaram, S. Zurek, 1990 .

MOVPE grown high performance 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic MODFETs

A. Thompson, G. Martin, G. Y. Lee, 1991 .

Self-aligned submicron gate digital GaAs integrated circuits

H. Levy, R. Lee, 1983, IEEE Electron Device Letters.

Subthreshold and near-threshold conduction in GaAs/AlGaAs MODFETs

D. Tsui, H. Lee, E. Kohn, 1989 .