Zeng-ping Zhang

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

S. Ringel, J. Speck, E. Farzana, 2018, Journal of Applied Physics.

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

Jared M. Johnson, D. Muller, C. Walle, 2019, Physical Review X.

Raman and X-ray photoelectron scattering study of lanthanum-doped strontium bismuth titanate

Jian Shen, Jun Zhu, Xiao-bing Chen, 2005 .

Properties and lanthanum distribution of Bi[sub 4−x]La[sub x]Ti[sub 3]O[sub 12]−SrBi[sub 4−y]La[sub y]Ti[sub 4]O[sub 15] intergrowth ferroelectrics

Jun Zhu, Xiao-bing Chen, X. Mao, 2003 .

Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate

Steven A. Ringel, Soo Jin Chua, Eugene A. Fitzgerald, 2016 .

Properties and lanthanum distribution of Bi4−xLaxTi3O12−SrBi4−yLayTi4O15 intergrowth ferroelectrics

Jun Zhu, X. Mao, Zeng-ping Zhang, 2003 .

Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing

Yongguang Wang, L. Zhuge, C. Jin, 2014 .