Wan-Ru Zhao

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

Baoping Zhang, T. Sekiguchi, G. Weng, 2015, Nanoscale Research Letters.

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Baoping Zhang, G. Weng, Jiangyong Zhang, 2014 .

2D FeOCl: A Highly In‐Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature‐Oscillation Chemical Vapor Transport

Zhidong Zhang, Jinbo Yang, P. Tan, 2022, Advanced materials.

Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green

H. Akiyama, Baoping Zhang, Shaoqiang Chen, 2015, Nanoscale Research Letters.