P.E. Dodd

Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies

P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, 2002, Digest. International Electron Devices Meeting,.

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

M. Simons, R.L. Pease, J. Baggio, 2009, IEEE Transactions on Nuclear Science.

Physics-based simulation of single-event effects

P.E. Dodd, P. Dodd, 2005, IEEE Transactions on Device and Materials Reliability.

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

M.D. Berg, C.M. Seidleck, J.A. Pellish, 2009, IEEE Transactions on Nuclear Science.

Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, 2008, IEEE Transactions on Nuclear Science.

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

R.A. Reed, R.D. Schrimpf, J.D. Black, 2008, IEEE Transactions on Nuclear Science.