K. Kuniyoshi

Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy

Y. Bando, G. Hashiguchi, K. Sakamoto, 1987 .

RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface

G. Hashiguchi, T. Sakamoto, T. Kawamura, 1987 .

Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates

Y. Bando, T. Sakamoto, S. Nagao, 1987 .