J. Kato

发表

Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces

I. Suemune, N. Teraguchi, A. Avramescu, 2001 .

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

A. Nishida, T. Mogami, T. Toyama, 2012 .

Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography

A. Nishida, T. Mogami, T. Toyama, 2013 .

Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-k/Metal Gate Stack by Atom Probe Tomography

Koji Inoue, Yasuyoshi Nagai, Takeshi Toyama, 2011 .

Electron Charge Density Study of (Na1-xKx)NbO3 in Cubic Structure

S. Wada, C. Moriyoshi, Y. Kuroiwa, 2008 .

The uniform and staggered magnetization and intersite interaction of the two-impurity Anderson model

O. Sakai, N. Kaneko, Y. Shimizu, 1993 .

Some Solid Solutions of the A_5B_ O_ - and A_6B_ O_ -Type Tungsten-Bronze Ferroelectrics

T. Ikeda, Hidetaka Sato, J. Kato, 1978 .

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

I. Suemune, Satoru Tanaka, Satoshi Yamada, 2003 .

Some Solid Solutions of the A5B10O30- and A6B10O30-Type Tungsten-Bronze Ferroelectrics

T. Ikeda, Hidetaka Sato, J. Kato, 1978 .