K. Haberle

MOS device fabrication using sputter-deposited gate oxide and polycrystalline silicon layers

K. Haberle, E. Froeschle, 1980 .

Multilevel gold metallization

V. Dudek, W. Langheinrich, R. Isernhagen, 1988, 1988. Proceedings., Fifth International IEEE VLSI Multilevel Interconnection Conference.

Depositon of Dielectric Films with Inductively Coupled Plasma-CVD in Dependence on Pressure and Two RF-Power-Sources

P. Meissner, A. Klein, R. Schafranek, 2009 .

Electrical properties and structure of boron-doped sputter-deposited polycrystalline silicon films

K. Haberle, E. Froeschle, 1979 .

On the Work Function Difference in the Al ‐ SiO2 ‐ Si System with Reactively Sputtered SiO2

K. Haberle, E. Froeschle, 1979 .