C. Liu

GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts

S. Chang, P. Chang, C. L. Yu, 2008 .

AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer

S. Chang, Y. Su, T. Hsu, 2003 .

Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate

C. Liu, Meiso Yokoyama Meiso Yokoyama, Yan Kuin Su Yan Kuin Su, 1996 .

Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

M. Yokoyama, C. Liu, Yan Kuin Su Yan Kuin Su, 1996 .

Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

Effects of Interfacial Oxide Layer for the Ta2O5 Capacitor After High-Temperature Annealing

Jone F. Chen, S. Sun, C. Liu, 2002 .