B. Sarıkavak

发表

MBE-growth and characterization of InxGa1¡xAs/GaAs (x=0.15) superlattice

M. Öztürk, S. Özçelik, H. Altuntas, 2008 .

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

M. Öztürk, S. Özçelik, E. Özbay, 2010 .

Influence of thermal annealing on the structure and optical properties of d.c. magnetron sputtered titanium dioxide thin films

S. Cetin, M. Öztürk, B. Kınacı, 2010 .

Interface state density analyzing of Au/TiO2(rutile)/n–Si Schottky barrier diode

T. Asar, U. Aydemir, S. Ozcelik, 2010 .

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

M. Öztürk, S. Özçelik, B. Sarıkavak, 2010 .

Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

G. Atmaca, A. F. Kuloglu, P. Taşli, 2010 .

Grain boundary related electrical transport in Al-rich AlxGa1 − xN layers grown by metal-organic chemical vapor deposition

E. Ozbay, A. Yildiz, M. Kasap, 2011 .