O. Korolkov

发表

Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding

T. Rang, A. Sitnikova, O. Korolkov, 2008, 2008 11th International Biennial Baltic Electronics Conference.

Analysis Of Deep Level Spectrum In GaAs p + -p-i-n-n + Structures

T. Rang, J. Toompuu, O. Korolkov, 2015 .

Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application

V. Mikli, A. Lebedev, R. Land, 2019, Key Engineering Materials.

The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts

T. Rang, V. Dmitriev, A. Syrkin, 2007 .

The basic Schottky parameters for combined diffusion welded and sputter metal contacts

T. Rang, O. Korolkov, N. Kuznetsova, 2006, 2006 International Biennial Baltic Electronics Conference.

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

A. Lebedev, V. Kozlovski, J. Toompuu, 2019 .

Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe

J. Mizsei, V. Mikli, T. Rang, 2013 .

Experimental study of surface distortions in silicon carbide caused by diffusion welding

J. Mizsei, T. Rang, J. Toompuu, 2012, 2012 13th Biennial Baltic Electronics Conference.

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

J. Mizsei, T. Rang, J. Toompuu, 2012 .

Analysis of Deep Level Centers in GaAs pin-Diode Structures

T. Rang, J. Toompuu, O. Korolkov, 2013 .

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

A. Lebedev, T. Rang, J. Toompuu, 2019, Semiconductors (Woodbury, N.Y.).

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes

A. Lebedev, A. Strel'chuk, V. Kozlovski, 2020 .

Polytypic Heterojunctions For Wide Bandgap Semiconductor Materials

T. Rang, G. Rang, O. Korolkov, 2015 .

Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing

A. Lebedev, T. Rang, V. Kozlovski, 2019, Materials Science Forum.

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons

A. Lebedev, V. Kozlovski, J. Toompuu, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

A. Lebedev, V. Kozlovski, J. Toompuu, 2019, Materials Science Forum.

Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding

J. Toompuu, O. Korolkov, N. Sleptsuk, 2010, 2010 12th Biennial Baltic Electronics Conference.