N. Sleptsuk

发表

Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding

T. Rang, A. Sitnikova, O. Korolkov, 2008, 2008 11th International Biennial Baltic Electronics Conference.

Analysis Of Deep Level Spectrum In GaAs p + -p-i-n-n + Structures

T. Rang, J. Toompuu, O. Korolkov, 2015 .

Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application

V. Mikli, A. Lebedev, R. Land, 2019, Key Engineering Materials.

The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts

T. Rang, V. Dmitriev, A. Syrkin, 2007 .

Pulsed laser deposition of Zn(O,Se) layers in nitrogen background Pressure

S. Bereznev, O. Volobujeva, M. Danilson, 2019, Scientific Reports.

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

A. Lebedev, V. Kozlovski, J. Toompuu, 2019 .

Experimental study of surface distortions in silicon carbide caused by diffusion welding

J. Mizsei, T. Rang, J. Toompuu, 2012, 2012 13th Biennial Baltic Electronics Conference.

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

J. Mizsei, T. Rang, J. Toompuu, 2012 .

A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation

P. Ivanov, A. Potapov, N. Sleptsuk, 2011 .

Leakage currents in 4H-SiC JBS diodes

I. Grekhov, P. Ivanov, A. Potapov, 2012 .

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

A. Lebedev, T. Rang, J. Toompuu, 2019, Semiconductors (Woodbury, N.Y.).

Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing

A. Lebedev, T. Rang, V. Kozlovski, 2019, Materials Science Forum.

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons

A. Lebedev, V. Kozlovski, J. Toompuu, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

A. Lebedev, V. Kozlovski, J. Toompuu, 2019, Materials Science Forum.

Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding

J. Toompuu, O. Korolkov, N. Sleptsuk, 2010, 2010 12th Biennial Baltic Electronics Conference.