Y. S. Zhao

Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN

H. P. Lee, R. Chuang, M. Bremser, 2000 .

A Simple and Reliable Wafer-Level Electrical Probing Technique for III-Nitride Light-Emitting Epitaxial Structures Y. S. Zhao, C. L. Jensen, Member, IEEE, R. W. Chuang, Member, IEEE, H. P. Lee, Z. J. Dong, and R. Shih

H. P. Lee, R. Chuang, C. L. Jensen, 2000 .

The Investigation of InGaN MQW Electroabsorption Modulator using the LED/Modulator/Detector Monolithically Integrated Structure

H. P. Lee, S. Chung, Y. S. Zhao, 2000 .

Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector

H. P. Lee, H. Liu, W. So, 2003 .

Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag

H. P. Lee, H. Liu, Chun-Lin Wang, 2003 .