A. Deng

发表

Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics

B. K. Panda, C. Ling, C. Beling, 1997 .

STUDY OF DX CENTER IN CD0.8ZN0.2TE:CL BY POSITRON ANNIHILATION

K. Lynn, C. Ling, C. Beling, 1998 .

Positron-lifetime study of compensation defects in undoped semi-insulating InP

C. Beling, S. Fung, Yang Zhao, 1998 .

Effects of annealing ambient on the formation of compensation defects in InP

P. Mascher, L. Y. Lin, Y. W. Zhao, 2003 .

Origin of deep level defect related photoluminescence in annealed InP

Youwen Zhao, Z. Dong, Jun Yang, 2006 .

Electron irradiation-induced defects in InP pre-annealed at high temperature

Z. Dong, Yukun Zhao, A. Deng, 2006 .

Positron-annihilation study of compensation defects in InP

C. Ling, Yuqiang Zhao, S. Fung, 2002 .

Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide

C. Ling, S. Fung, C. Beling, 2000 .

A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias

C. Ling, C. Beling, S. Fung, 2002 .