Soonwoo Kwon

Interface properties of (NH4)2Sx‐treated In0.5Ga0.5P Schottky contacts

Hye Jin Lim, H. Kwon, B. Choe, 1995 .

Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitride

I. Han, K. Kang, Hye Jin Lim, 1993 .