K. Eisele

2.1 Metal-semiconductor junctions—related to deposition of thin films

M. Schulz, K. Eisele, 1977 .

Photolytic silicon nitride deposition for gallium arsenide by 193 nm excimer laser radiation

W. Rothemund, B. Dischler, K. Eisele, 1990 .

SF 6, a Preferable Etchant for Plasma Etching Silicon

K. Eisele, 1981 .

1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

A. Axmann, W. Haydl, H. Ennen, 1985 .

Balanced transistor amplifiers for precise wideband microwave applications

K. Kurokawa, R. Engelbrecht, K. Kurokawa, 1965 .