B. Donnellan

Bow Free 4″ Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

C. Fisher, P. Mawby, A. Sánchez, 2012 .

Innovative 3C-SiC on SiC via Direct Wafer Bonding

C. Fisher, P. Mawby, S. M. Thomas, 2013 .

An investigation into the utilisation of power MOSFETs at cryogenic temperatures to achieve ultra-low power losses

B. T. Donnellan, P. Mawby, A. Bryant, 2010, 2010 IEEE Energy Conversion Congress and Exposition.

Introducing the hybrid unipolar bipolar field effect transistor : the HUBFET

Benedict T. Donnellan, B. Donnellan, 2013 .

Introducing a 1200V vertical merged IGBT and Power MOSFET: The HUBFET

M. Rahimo, P. A. Mawby, L. Storasta, 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).