E. Dudutienė

GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization

A. Krotkus, M. Čaplovičová, R. Jakieła, 2020, Scientific Reports.

Influence of an ultra-thin buffer layer on the growth and properties of pseudomorphic GaAsBi layers

A. Jasinskas, V. Bukauskas, R. Butkutė, 2022, Lithuanian Journal of Physics.

High precision parabolic quantum wells grown using pulsed analog alloy grading technique: Photoluminescence probing and fractional-dimensional space approach

G. Valušis, A. Udal, A. Cerskus, 2021 .

Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers

J. Devenson, G. Valušis, A. Jasinskas, 2019, Nanotechnology.

Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes

R. Butkutė, J. Matukas, S. Pralgauskaitė, 2023, Sensors.

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

G. Valušis, A. Jasinskas, V. Bukauskas, 2021 .

GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization

A. Krotkus, M. Čaplovičová, R. Jakieła, 2020, Scientific Reports.