J. Gao

Effect of horizontal p–n junction on optoelectronics characteristics in InGaN-based light-emitting diodes with V-shaped pits

F. Jiang, Jianli Zhang, Z. Quan, 2020, Journal of Physics D: Applied Physics.

Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates

Jianli Zhang, Junlin Liu, Chang-da Zheng, 2020, Journal of Luminescence.

Recombination pathways and hole leakage behavior in InGaN/GaN multiple quantum wells with V-shaped pits

Jianli Zhang, Junlin Liu, Chang-da Zheng, 2019 .

Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

F. Jiang, Jianli Zhang, Z. Quan, 2020 .

Efficient emission of InGaN-based light-emitting diodes: toward orange and red

Shenmin Zhang, Meng Zhang, F. Jiang, 2020 .

Effect of hole blocking layer on V-pit hole injection and internal quantum efficiency in GaN-based yellow LED

Fe-Guo Deng, Jianli Zhang, Z. Quan, 2020 .

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition. Corrigendum

F. Jiang, Jianli Zhang, Shuan Pan, 2019, Journal of Applied Crystallography.