Shen Yan

发表

Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer

Z. Deng, Yang Jiang, Wenxin Wang, 2020 .

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction

Yang Jiang, Wenxin Wang, H. Jia, 2018, Chinese Physics B.

Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate

Z. Deng, Yang Jiang, Wenxin Wang, 2019, Superlattices and Microstructures.

Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure*

Yang Jiang, Wenxin Wang, H. Jia, 2017 .

Characterization of edge dislocation density through X-ray diffraction rocking curves

Yimeng Song, Yang Jiang, Wenxin Wang, 2020 .

Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes

Yimeng Song, Z. Deng, Yang Jiang, 2020 .

Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction

Yang Jiang, Wenxin Wang, H. Jia, 2019, Applied Physics Express.

Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure

Yang Jiang, Wenxin Wang, H. Jia, 2018 .

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

Yang Jiang, Chunhua Du, H. Jia, 2019, CrystEngComm.

Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates

Yang Jiang, H. Jia, Ziguang Ma, 2019, CrystEngComm.

Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate

Yang Jiang, Wenxin Wang, Chunhua Du, 2018, Applied Physics Express.

The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

Yimeng Song, Yang Jiang, Wenxin Wang, 2020, Materials Research Express.