H. Baş

Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

O. Özdemir, E. Dogheche, B. Alshehri, 2022, Journal of Materials Science: Materials in Electronics.

Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

O. Özdemir, E. Dogheche, K. Bozkurt, 2022, Journal of Materials Science: Materials in Electronics.

Anisotropic and dielectric properties of TlSbSe2 chalcogenide compounds

D. Deǧer, N. Kalkan, H. Baş, 2016, Journal of Materials Science: Materials in Electronics.

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

N. Kalkan, H. Baş, 2015, Journal of Electronic Materials.

Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structure

A. Ramdane, O. Özdemir, Q. Gaimard, 2019, Journal of Physics D: Applied Physics.

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

A. Erol, O. Özdemir, E. Dogheche, 2023, Journal of Luminescence.