文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
Y. Ueda
发表
Image sensor with new trench-gated phototransistor
H. Watanabe, K. Yoneda, K. Sakurano, 2017, 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).