T. N. Thanh

发表

Nitrogen–phosphorus competition in the molecular beam epitaxy of GaPN

O. Durand, A. Létoublon, A. Corre, 2013 .

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

C. Robert, O. Durand, J. Even, 2013 .

Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

C. Robert, O. Durand, S. Loualiche, 2012 .

Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy

O. Durand, J. Even, A. Moreac, 2013 .

Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

C. Robert, O. Durand, J. Even, 2011 .

Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

Olivier Durand, Jacky Even, Slimane Loualiche, 2011 .

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Olivier Durand, Jacky Even, Charles Cornet, 2013 .

Abrupt GaP/Si hetero-interface using bistepped Si buffer

L. Largeau, G. Patriarche, O. Durand, 2015 .

Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots

C. Robert, O. Durand, J. Even, 2012 .

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

C. Robert, O. Durand, S. Loualiche, 2013 .

Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers

C. Robert, N. Boudet, O. Durand, 2013 .

Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

O. Durand, A. Létoublon, A. Corre, 2012 .