D. Bohling

发表

Inductive, steric, and environmental effects in the nonaqueous electrochemistry of hexakis(aryl isocyanide)chromium complexes

K. R. Mann, J. F. Evans, D. Bohling, 1982 .

Low temperature growth of AlGaAs by MOMBE (CBE) using trimethylamine alane

C. Abernathy, D. Bohling, 1992 .

Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

A. S. Jordan, S. Pearton, T. Ambrose, 1991 .

Low Temperature Growth of GaAs and AlGaAs by Mombe

C. Abernathy, A. C. Jones, D. Bohling, 1991 .

The role of aluminum and hydrogen in impurity contamination of AlGaAs grown by MOMBE

S. Pearton, C. Abernathy, D. Bohling, 1991 .

The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine

W. S. Hobson, A. S. Jordan, S. Pearton, 1991 .

Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

W. S. Hobson, A. S. Jordan, S. Pearton, 1990 .

Hydrogen content of silicon and thermal oxidation induced moisture generation in an integrated rapid thermal processing reactor

J. Wortman, D. Bohling, G. Hames, 1993 .

Effects of microcontaminants in oxygen during gate oxide growth: interfacial effects and device reliability

W. Lanford, J. Wortman, J. McGuire, 1994, Proceedings of 1994 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC).

The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy

P. Wisk, F. Ren, S. Pearton, 1994 .

Dry Surface Cleaning of Plasma-Etched Hemts

W. S. Hobson, F. Ren, S. Pearton, 1992 .

Novel Group V Sources for Use in Mombe

P. Wisk, C. Abernathy, D. Bohling, 1994 .

Gas-Phase and Surface Decomposition of Tris -Dimethylamino Arsenic

K. Jensen, M. Xi, D. Bohling, 1993 .

Deposition, annealing and characterisation of high‐dielectric‐constant metal oxide films

A. Lane, G. Tempel, W. Kern, 1995 .

The Effects of Chemical Vapor Cleaning Chemistries on Silicon Surfaces

J. Langan, A. G. Gilicinski, R. Rynders, 1993 .

Synthesis, reactivity, and electrochemical characterization of [(.eta.5-C5H5)Ru(.eta.7-C7H7)](PF6)2 and [(.eta.5-C5H5)Ru(.eta.6-C7H8)](PF6)

D. C. Boyd, K. R. Mann, D. Bohling, 1987 .

Photochemical Properties and X-ray Structural Characterization of a Tetranuclear Bimetallic Complex: [Rh2(TM4-bridge)4Mn2(CO)10](PF6)2.2(CH3)2CO (TM4-bridge = 2,5-Dimethyl-2,5-diisocyanohexane)

K. R. Mann, D. Bohling, T. P. Gill, 1981 .

Synthesis, Characterization, and Properties of Stable Chromium(III) Aryl Isocyanide Complexes

K. R. Mann, D. Bohling, 1983 .

X-ray structural characterization of [Cr(CNPh)6][CF3SO3], [Cr(CNPh)6][PF6]2, and [Cr(CNPh)6][SbCl6]3•CH2Cl2. Completion of a unique series of complexes in which the metal attains four different oxidation states while maintaining identical ligation

K. R. Mann, D. Bohling, 1984 .

Application of the rotating photoelectrode to the detection of an organotransition-metal intermediate. Photoelectrochemical detection of (η5-C5H5)Fe(CH3CN)3+

D. C. Boyd, K. R. Mann, D. Bohling, 2002 .

Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxy

K. Jensen, C. Abernathy, D. Bohling, 1994 .

Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy

P. Wisk, F. Ren, S. Pearton, 1993 .

The feasibility of using trimethylamine alane as an Al precursor for MOMBE

A. S. Jordan, F. Ren, S. Pearton, 1991 .

The Incorporation and Behavior of Oxygen in AlGaAs Grown by Mombe Using Trimethylamine Alane

F. Ren, S. Pearton, C. Abernathy, 1990 .

Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)

P. Wisk, F. Ren, S. Pearton, 1992 .

Growth of AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane

S. Rushworth, A. C. Jones, D. Bohling, 1990 .

Gas Phase and Surface Reactions of Organometallic Arsenic Sources

K. Jensen, T. Omstead, D. Bohling, 1989 .

The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE

P. Wisk, F. Ren, S. Pearton, 1993 .

Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic

P. Wisk, C. Abernathy, D. Bohling, 1992 .

Reaction of 1,1,1,5,5,5‐Hexafluoro‐2,4‐pentanedione (H+hfac) with CuO , Cu2 O , and Cu Films

A. Lane, D. Hess, S. E. Beck, 1995 .

Electrochemical redox behaviour of the hexakis(aryl isocyanide) complexes of molybdenum(0) and tungsten(0)

M. J. Weaver, K. R. Mann, T. Gennett, 1985 .

Chemical Vapor Cleaning of Sodium from SiO 2

B. S. Felker, D. Bohling, M. George, 1992 .

Study of Silicon Surface Roughness by Atomic Force Microscopy

A. G. Gilicinski, S. E. Beck, R. Rynders, 1993 .

Surface reactions of dimethylaminoarsine during MOMBE of GaAs

K. Jensen, J. Lu, D. Bohling, 1992 .

Investigation of the Hydrogen Content of Silicon in an Integrated Rapid Thermal Processing Reactor

J. Wortman, S. E. Beck, D. Bohling, 1992 .

Examining process induced contamination: plasma etching and chemical vapor deposition reactors coupled to an in situ surface analytical capability

J. Langan, D. Bohling, M. George, 1992, IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - ASMC '92 Proceedings.