Kohei Sasaki

发表

Latest progress in gallium-oxide electronic devices

Akito Kuramata, Masataka Higashiwaki, Man Hoi Wong, 2018, OPTO.

Advances in Ga2O3 MOSFETs for Power and Radiation-Hard Electronics

昭憲武山, 武大島, Akito Kuramata, 2017 .

Gallium Oxide Schottky Barrier Diodes

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2018, 2018 76th Device Research Conference (DRC).

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

Ming Xiao, Han Wang, Yuhao Zhang, 2020, IEEE Journal of the Electron Devices Society.

Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes

Jun Arima, Kohei Sasaki, Shigenobu Yamakoshi, 2018, 2018 76th Device Research Conference (DRC).

Recent Advances in Ga2O3 MOSFET Technologies

Takeshi Ohshima, Chia-Hung Lin, Masataka Higashiwaki, 2018, 2018 76th Device Research Conference (DRC).

Gallium-oxide trench-type devices

Akito Kuramata, Kohei Sasaki, Shigenobu Yamakoshi, 2019, OPTO.

Modification and Validation of the DREIDING Force Field for Molecular Liquid Simulations (DREIDING-UT)

Kohei Sasaki, Takefumi Yamashita, K. Sasaki, 2021, J. Chem. Inf. Model..

Radiation hardness of Ga2O3 MOSFETs against gamma-ray irradiation

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2017, 2017 75th Annual Device Research Conference (DRC).

Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2013 .

Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

Akito Kuramata, Kohei Sasaki, Shigenobu Yamakoshi, 2012 .

Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016, IEEE Electron Device Letters.

Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2014 .

Origins of etch pits in β-Ga2O3(010) single crystals

Akito Kuramata, Kohei Sasaki, Osamu Ueda, 2016 .

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2018, IEEE Electron Device Letters.

MBE grown Ga2O3 and its power device applications

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2013 .

Experimental Study and Atomic Level Description of Adsorption Process of CO2 on Doped Alkaline Earth Oxides

Yoshiyuki Kawazoe, Tatsuro Ariyama, Ryo Inoue, 2012 .

Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2015 .

β-Ga2O3 Single Crystal as a Photoelectrode for Water Splitting

Akira Ohtomo, Akito Kuramata, Kohei Sasaki, 2013 .

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2012 .

Gallium oxide ( Ga 2 O 3 ) metal-semiconductor field-effect transistors on single-crystal β-Ga 2 O 3 ( 010 ) substrates

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2013 .

First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2017, IEEE Electron Device Letters.

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Jonathan P. McCandless, Krishnamurthy Mahalingam, Brandon M. Howe, 2018, IEEE Electron Device Letters.

Recent progress in Ga2O3 power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2013 .

Recent progress in Ga 2 O 3 power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Formation of Semi-Insulating Layers on Semiconducting β-Ga2O3 Single Crystals by Thermal Oxidation

Akira Ohtomo, Akito Kuramata, Kohei Sasaki, 2013 .

Investigation of dose-rate effects and cell-cycle distribution under protracted exposure to ionizing radiation for various dose-rates

Hiroyuki Date, Kohei Sasaki, Kaori Tsutsumi, 2018, Scientific Reports.

High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Ming Xiao, Yuhao Zhang, Kohei Sasaki, 2019 .

Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Shingo Saito, Tohru Honda, Masataka Higashiwaki, 2015 .

Development of gallium oxide power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2014 .

Depletion-mode Ga2O3 MOSFETs

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2013, 71st Device Research Conference.

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

Tohru Honda, Masataka Higashiwaki, Kohei Sasaki, 2013 .