Su-Hwan Choi

发表

Structural, Optical, and Electrical Properties of InOx Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications

Ki-Lim Han, Taehyun Hong, Kyoungrok Kim, 2022, ACS Applied Electronic Materials.

Plasma-enhanced atomic-layer-deposited indium oxide thin film using a DMION precursor within a wide process window

Seong-Hwan Ryu, Taehyun Hong, Jinsin Park, 2022, Ceramics International.

Undoped tin dioxide transparent electrodes for efficient and cost-effective indoor organic photovoltaics (SnO2 electrode for indoor organic photovoltaics)

Jin-seong Park, Young-Jun You, J. Shim, 2021, NPG Asia Materials.

The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications

S. Cho, Hye-mi Kim, Jinsin Park, 2023, Advanced Electronic Materials.

Facile control of p-type SnO TFT performance with restraining redox reaction by ITO interlayers

Hye-mi Kim, Jinsin Park, Su-Hwan Choi, 2022, Journal of Information Display.

Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization.

Jin-seong Park, Junghwan Kim, Jung‐Hoon Lee, 2021, ACS applied materials & interfaces.

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor.

Jin-seong Park, Hyun-Mo Lee, Hyun-Jun Jeong, 2021, ACS applied materials & interfaces.

Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

Jin-seong Park, Hyun-Jun Jeong, J. Lim, 2021 .

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

Taehyun Hong, Jinsin Park, Jun Hyung Lim, 2023, Advanced Electronic Materials.

Plasma Enhanced atomic layer deposited amorphous gallium oxide thin films using novel trimethyl[N-(2-methoxyethyl)-2-methylpropan-2-amine]gallium

J. Lim, Wan-Ho Choi, Taehyun Hong, 2021 .

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

Dong-Gyu Kim, Won-Bum Lee, Jinsin Park, 2023, Small Structures.