Taizoh Sadoh

发表

Formation of polycrystalline-silicon-germanium films by pulsed laser-induced rapid annealing

Toshiyuki Sameshima, Hajime Watakabe, Hiroshi Kanno, 2004, International Symposium on Laser Precision Microfabrication.

(Invited) Gold-Induced Low-Temperature (<300°C) Growth of Quasi-Single Crystal SiGe on Insulator for Advanced Flexible Electronics

Taizoh Sadoh, Masanobu Miyao, Jong Hyeok Park, 2015 .

Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Koji Ueda, Taizoh Sadoh, Yu-ichiro Ando, 2008, IEICE Trans. Electron..

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

Abdul Manaf Hashim, Mastura Shafinaz Zainal Abidin, Shaharin Fadzli Abd Rahman, 2011, Sensors.

(Invited) Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics

Takahiro Tanaka, Taizoh Sadoh, Masanobu Miyao, 2016 .

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao, 2008, International Conference on Thin Film Physics and Applications.

Deep states in silicon on sapphire by transient-current spectroscopy

Akiyoshi Baba, Hiroshi Nakashima, Taizoh Sadoh, 1997 .

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Akira Heya, Naoto Matsuo, Kazuhiro Kanda, 2013 .

High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Taizoh Sadoh, Masanobu Miyao, Takanori Tanaka, 2009 .

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

Ichiro Mizushima, Taizoh Sadoh, Masanobu Miyao, 2012 .

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Taizoh Sadoh, Masanobu Miyao, Keisuke Yamamoto, 2010 .

30‐4: Characterization of Si Thin Films Doped by Wet‐Chemical Laser Processing

Daisuke Nakamura, Taizoh Sadoh, Akira Suwa, 2017 .