Masanobu Miyao

发表

Formation of polycrystalline-silicon-germanium films by pulsed laser-induced rapid annealing

Toshiyuki Sameshima, Hajime Watakabe, Hiroshi Kanno, 2004, International Symposium on Laser Precision Microfabrication.

(Invited) Gold-Induced Low-Temperature (<300°C) Growth of Quasi-Single Crystal SiGe on Insulator for Advanced Flexible Electronics

Taizoh Sadoh, Masanobu Miyao, Jong Hyeok Park, 2015 .

(Invited) Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics

Takahiro Tanaka, Taizoh Sadoh, Masanobu Miyao, 2016 .

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao, 2008, International Conference on Thin Film Physics and Applications.

Ultrashallow Ohmic contacts for n-type Ge by Sb δ-doping

Masanobu Miyao, Kentarou Sawano, Kohei Hamaya, 2010 .

Correlation between lattice damage and electrical activation of phosphorus‐implanted silicon

Masanobu Miyao, Takashi Tokuyama, M. Miyao, 1978 .

Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Masanobu Miyao, Jiro Ushio, Takuya Maruizumi, 1999 .

Formation of Tensilely Strained Germanium-on-Insulator

Masanobu Miyao, Kentarou Sawano, Kohei Hamaya, 2011 .

Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGex Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy

Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao, 1998 .

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

Masanobu Miyao, Sunao Yamada, Y. Maeda, 2010 .

Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao, 1999 .

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Akira Heya, Naoto Matsuo, Kazuhiro Kanda, 2013 .

High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Taizoh Sadoh, Masanobu Miyao, Takanori Tanaka, 2009 .

Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy

Masanobu Miyao, Takanori Tanaka, K. Toko, 2009 .

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

Ichiro Mizushima, Taizoh Sadoh, Masanobu Miyao, 2012 .

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Taizoh Sadoh, Masanobu Miyao, Keisuke Yamamoto, 2010 .