T. Jung

Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO2-based ferroelectric capacitor

C. Shin, J. Shin, T. Jung, 2020, Semiconductor Science and Technology.

Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire.

M. Arnold, J. McChesney, J. Kawasaki, 2022, Nano letters.

Defect profiling in FEFET Si:HfO2 layers

R. Degraeve, S. Clima, D. Linten, 2020 .

Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s

D. Linten, B. O’Sullivan, C. Shin, 2021, IEEE Transactions on Device and Materials Reliability.

Device-design optimization of ferroelectric-gated vertical tunnel field-effect transistor to suppress ambipolar current

C. Shin, T. Jung, 2020, Semiconductor Science and Technology.