Young-Jun Choi

发表

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Suhye Park, H. Jeon, S. Song, 2019, Applied Sciences.

Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE

Won-Jae Lee, Hae-Yong Lee, Ju-hyung Ha, 2014 .

Influence of the duty cycle on structural and mechanical properties of oxide layers on Al-1050 by a plasma electrolytic oxidation process

Jung-In Moon, Jeong-Hwan Song, Dae-Young Lim, 2014, Metals and Materials International.

Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method

Won-Jae Lee, Hae-Yong Lee, Juan Wang, 2013 .

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

Won-Jae Lee, H. Harima, Hae-Yong Lee, 2015 .

Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE

Hae-Yong Lee, M. Park, Young-Jun Choi, 2018, Journal of Crystal Growth.

Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method

H. Kim, Won-Jae Lee, Hae-Yong Lee, 2016 .

The effects of growth temperatures and V/III ratios at 1000℃ for a-plane GaN epi-layer on r-plane sapphire grown by HVPE

Y. Choi, Won-Jae Lee, Hae-Yong Lee, 2015 .

Effect of the Control of Bowing in Free-standing GaN by Mechanical Polishing

D. Yoon, Jin-ho Kim, D. Jeon, 2015 .