Eui-Sang Park

发表

Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch

Young Jae Kwon, Yoon Kyeung Lee, C. Hwang, 2018, Nanotechnology.

Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2020, Crystal Growth & Design.

Electroforming-free Bipolar Resistive Switching in GeSe Thin Films with a Ti-containing Electrode.

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2019, ACS applied materials & interfaces.

Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

Yoon Kyeung Lee, C. Hwang, Sijung Yoo, 2018 .

Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage.

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2020, ACS applied materials & interfaces.

Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2019, Chemistry of Materials.

Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals

Woohyun Kim, Cheol Seong Hwang, Yoon Kyeung Lee, 2019, Micromachines.

Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory

Yoon Kyeung Lee, C. Hwang, C. Yoo, 2019, Chemistry of Materials.

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

C. Hwang, S. Ivanov, Taehong Gwon, 2017 .