Kouhei Takafuji

发表

Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln = La∼Nd)

H. Ohta, T. Kamiya, H. Hosono, 2003 .

Wide-gap P-type Conductive Properties in Layered Oxychalcogenides

H. Ohta, H. Hosono, M. Hirano, 2002 .

Optoelectronic properties and electronic structure of YCuOSe

T. Kamiya, H. Hosono, M. Hirano, 2007 .

Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys

H. Ohta, T. Kamiya, H. Hosono, 2003 .

Preparation and crystal structure analysis of CeCuOS

H. Hosono, K. Ueda, Kouhei Takafuji, 2003 .

Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

H. Ohta, T. Kamiya, H. Hosono, 2004 .

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

H. Ohta, T. Kamiya, H. Hosono, 2004 .

Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)

H. Ohta, T. Kamiya, H. Hosono, 2004 .

Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln: La—Nd).

H. Ohta, T. Kamiya, H. Hosono, 2003 .