M. de la Mare

Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy

A. Krier, A. Patané, Q. Zhuang, 2012 .

Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

A. Krier, M. Kesaria, M. Mare, 2016 .

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

A. Krier, S. Dhar, Subhasis Das, 2011 .

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

A. Krier, M. de la Mare, Q. Zhuang, 2011, OPTO.

Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range

A. Krier, A. Sánchez, R. Beanland, 2010 .

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

A. Krier, S. Dhar, M. de la Mare, 2009, Remote Sensing.

InAs-based dilute nitride materials and devices for the mid-infrared spectral range

A. Krier, M. de la Mare, Q. Zhuang, 2013, Photonics West - Optoelectronic Materials and Devices.

Development of dilute nitride materials for mid-infrared diode lasers

M. Thompson, A. Krier, R. Kudrawiec, 2012 .