Jie Xu

发表

Separation of the Schottky barrier and polarization effects on the photocurrent of Pt sandwiched Pb(Zr0.20Ti0.80)O3 films

Xinglong Wu, M. Shen, F. Zheng, 2008 .

Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films

M. Shen, Dawei Cao, F. Zheng, 2010 .

Space charge effect on the photocurrent of Pt-sandwiched Pb(Zr0.20Ti0.80)O3 film capacitors

Xinglong Wu, M. Shen, Dawei Cao, 2009 .

Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)

Manijeh Razeghi, Joseph S. Wojkowski, J. D. Kim, 1996 .

AlGaN ultraviolet photoconductors grown on sapphire

Manijeh Razeghi, Adam W. Saxler, Patrick Kung, 1996 .

The molecular beam epitaxial growth of InSb on (111)B GaAs

J. D. Kim, I. Ferguson, M. Razeghi, 1996 .

InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy

E. Michel, M. Razeghi, J. Dongun Kim, 1996, IEEE Photonics Technology Letters.

Enhancement of performance of GaN-based light-emitting diodes by insertion and optimization of n-InGaN/GaN composite current-spreading layers

Xiong Zhang, Hao Guo, Jie Xu, 2014 .

Room‐temperature operation of InTlSb infrared photodetectors on GaAs

J. D. Kim, M. Razeghi, S. Javadpour, 1996 .