Taikyu Kim

发表

Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application.

Jae Kyeong Jeong, Seungwu Han, K. Chung, 2019, ACS applied materials & interfaces.

P‐198: Late‐News Poster: Off‐Current Reduction in p‐Type SnO Thin‐Film Transistors through Fermi‐Level Unpinning

Jae Kyeong Jeong, Hongwei Xu, Sung-Soo Yim, 2019, SID Symposium Digest of Technical Papers.

P‐31: Student Poster: Low Temperature of 150 °C Processed IGTO Thin‐Film Transistors for Flexible Display Application

Taikyu Kim, J. Jeong, C. Choi, 2022, SID Symposium Digest of Technical Papers.

Low-power driven broadband phototransistor with a PbS/IGO/HfO2 stack

Min Jae Kim, Hong-wei Xu, Taikyu Kim, 2023, Journal of Materials Chemistry C.

Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors

Min Jae Kim, Taikyu Kim, J. Jeong, 2023, IEEE Transactions on Electron Devices.

Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Jae Kyeong Jeong, Seung-Hwan Kim, Hyun‐Yong Yu, 2020 .

Origin of Ambipolar Behavior in p-Type Tin Monoxide Semiconductors: Impact of Oxygen Vacancy Defects

Min Jae Kim, Hongwei Xu, Hochan Lee, 2021, IEEE Transactions on Electron Devices.

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Jae Kyeong Jeong, Taikyu Kim, 2021, physica status solidi (RRL) – Rapid Research Letters.

Universal Metal–Interlayer–Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation

Seung-Hwan Kim, Hyun‐Yong Yu, Jeong-kyu Kim, 2018, IEEE Transactions on Electron Devices.

Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors

Taikyu Kim, J. Jeong, C. Choi, 2023, IEEE Electron Device Letters.

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition.

Min Jae Kim, Taikyu Kim, J. Jeong, 2023, ACS applied materials & interfaces.

High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction

N. On, Jun Hyung Lim, Taikyu Kim, 2023, Small methods.

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.

Min Jae Kim, Youngho Kang, Jun Hyung Lim, 2022, ACS applied materials & interfaces.

High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder

Jaeman Jang, J. Noh, K. Park, 2023, IEEE Electron Device Letters.

Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

Seungwu Han, K. Chung, Sung-Yoon Chung, 2022, npj 2D Materials and Applications.

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film.

H. Hosono, Junghwan Kim, S. Ueda, 2021, ACS Applied Materials and Interfaces.

High mobility p-channel tin monoxide thin-film transistors with hysteresis-free like behavior

Jeong-kyu Kim, Taikyu Kim, Se Eun Kim, 2022, Applied Physics Letters.

Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor.

Jae Kyeong Jeong, Seungwu Han, Yong Youn, 2019, ACS applied materials & interfaces.

High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions.

Min Jae Kim, Taikyu Kim, J. Jeong, 2022, ACS applied materials & interfaces.