Y. Ding

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Y. Yeo, B. Nguyen, N. Daval, 2013 .

Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices

Zhen Wang, Li Li, Xinfu Liu, 2016, Sensors.

An Expandable ${\rm ZnS}\hbox{-}{\rm SiO}_{2}$ Liner Stressor for N-Channel FinFETs

Y. Yeo, B. Liu, Qian Zhou, 2014, IEEE Transactions on Electron Devices.

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Y. Yeo, B. Liu, S. Koh, 2013, IEEE Transactions on Electron Devices.

Modeling of a new liner stressor comprising Ge2Sb2Te5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

Y. Yeo, B. Liu, Ran Cheng, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

A Mask-Misalignment Offset Reduction Method for Design of Cross-Like CMOS Hall Devices

Li Li, Hongbing Pan, Yifan Pan, 2016, 2016 Sixth International Conference on Instrumentation & Measurement, Computer, Communication and Control (IMCCC).

Performance Comparison of Cross-Like Hall Plates with Different Covering Layers

Xinfu Liu, Chengjie Li, Jin Sha, 2014, Sensors.

GeTe Liner Stressor Featuring Phase-Change- Induced Volume Contraction for Strain Engineering of Sub-50-nm p-Channel FinFETs: Simulation and Electrical Characterization

Y. Yeo, B. Liu, Yue Yang, 2014, IEEE Transactions on Electron Devices.

A new liner stressor (GeTe) featuring stress enhancement due to very large phase-change induced volume contraction for p-channel FinFETs

Y. Yeo, B. Liu, S. Koh, 2012, 2012 Symposium on VLSI Technology (VLSIT).