Zhiqiang Qi

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

Chaoji Chen, Feng Wu, J. Dai, 2014 .

Exciton-phonon interaction in Al 0.4 Ga 0.6 N/Al 0.53 Ga 0.47 N multiple quantum wells

P. Jin, Z. Wang, Changqin Chen, 2016 .

Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth

J. Dai, Changqin Chen, Wei Zhang, 2015, Journal of Electronic Materials.

Compact and robust Bragg grating stabilized diode laser at 780 nm

Chensheng Wang, Zhiqiang Qi, Wenliang Hu, 2022, Other Conferences.

Optical performance improvement of GaN/AlN quantum dots via a two-step grown caplayer

Li Senlin, J. Dai, Changqin Chen, 2015 .

Fabrication and Characterization of Vertically Aligned ZnO Nanorod Arrays via Inverted Monolayer Colloidal Crystals Mask

Juan Xu, J. Dai, Changqin Chen, 2018, Electronic Materials Letters.

Influence of high-temperature postgrowth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy

Li Senlin, J. Dai, Changqin Chen, 2015 .