R. Hasebe

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2009 .

Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs

R. Kuroda, S. Sugawa, T. Ohmi, 2009, IEEE Transactions on Electron Devices.

Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing

T. Ohmi, S. Sugawa, A. Teramoto, 2009 .