A. Evwaraye

Electrical properties of manganese‐doped gallium phosphide

H. Woodbury, A. Evwaraye, 1976 .

Electrical properties of platinum in silicon as determined by deep‐level transient spectroscopy

E. Sun, A. Evwaraye, 1976 .

The defect levels in p‐type silicon doped with manganese

A. Evwaraye, 1977 .

Impurity states in cobalt-doped silicon

A. Evwaraye, 1978 .

Determination of interface and bulk‐trap states of IGFET’s using deep‐level transient spectroscopy

K. Wang, A. Evwaraye, 1976 .

The 1.1 eV deep level in 4H-SiC

W. Mitchel, J. Solomon, R. Perrin, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

Electron‐irradiation‐induced divacancy in lightly doped silicon

E. Sun, A. O. Evwaraye, Edmund Sun, 1976 .

Electrical characteristics of sputtering-induced defects in n-type silicon

L. Andersson, A. Evwaraye, 1978 .

Annealing of irradiation‐induced defects in arsenic‐doped silicon

A. Evwaraye, 1977 .

Electron‐irradiation damage in antimony‐doped silicon

A. Evwaraye, 1977 .

The role of oxygen in irradiated arsenic‐doped silicon

A. Evwaraye, 1976 .

Room temperature instability of electron induced defects in n‐type silicon containing germanium

A. Evwaraye, 1979 .