Kiyoshi Funaiwa

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2004 .