T. Tsunoda

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2004 .

Highly efficient and stable radio-frequency — thermal plasma system for the production of ultrafine and ultrapure β-SiC powder

Ken Fukuda, T. Tsunoda, T. Kameyama, 1990 .