B. Allain

发表

Modelling of silicon nitride deposition by 254 nm Hg-photosensitization and 185 nm photolysis of SiH4/NH3 gas mixture

J. Perrin, B. Allain, J. Guizot, 1989 .

Alloying effects on the electronic structure of a-Si1−xNx:H films prepared by a mercury-photosensitized decomposition method

J. Perrin, A. Gheorghiu, C. Sénémaud, 1989 .

a-Si:H Deposition from SiH4 and Si2H6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition

J. Perrin, P. Cabarrocas, J. Friedt, 1988 .

Modeling and diagnostics of silicon nitride deposition from 254‐nm Hg photosensitization of SiH4‐NH3 mixtures: Luminescence of HgNH3 excimer and laser‐induced fluorescence of NH2(Ã 2A1)

T. Fuyuki, J. Perrin, B. Allain, 1990 .

Quenching of excited mercury atoms (6 3P1 and 6 3P0) in collisions with SiH4, SiD4, Si2H6 and GeH4

J. Perrin, B. Allain, 1988 .

Kinetics of deposition and electrical properties of silicon nitride films obtained by 185 nm photolysis of SiH4-NH3 mixtures

J. Perrin, P. Alnot, F. Wyczisk, 1991 .

Surface reactions of radicals during deposition of amorphous semiconductors by photochemical decomposition of molecular hydrides

J. Perrin, B. Allain, 1987 .