Jun-ming Zhou

发表

Photoconductivity of a modulation‐doped GaAs/AlGaAs heterostructure induced by fast neutron irradiation

Yongkang Li, Yi Huang, Yongqiu Wu, 1988 .

The self-organized In0.25Ga0.75As quantum dots grown by migration enhanced epitaxy

Qi Huang, Yuan Wu, Wenxiu Cheng, 1998 .

Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching

Limin Guo, H. Jia, Hong Chen, 2006 .

Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching

H. Jia, Haohong Chen, L. W. Guo, 2006 .

Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy

K. Fung, Yuzhen Huang, Aiju Ding, 1990 .

Defect-enhanced second-harmonic generation in (SimGen)p superlattices

Zheng-hao Chen, M. Loy, Ning Wang, 1998 .

Valence intersubband transitions stimulated by polarized light in Si1−xGex/Si multiple quantum wells

D. Cui, Zheng-hao Chen, Guo‐zhen Yang, 1996 .

X‐ray characterization of strain relaxation in InGaAs/GaAs strained‐layer superlattices

Jianhua Li, Z. Mai, W. Feng, 1993 .

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

Yang Jiang, Hong Chen, Chunhua Du, 2014 .

High pressure behavior of electronic states in GaAs/Ga1−xAlxAs multiple quantum wells

Lijun Wang, W. Ge, W. Jia, 1990 .

MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface

T. Hashizume, J. Zhou, T. Sakata, 1995 .

Characterization of edge dislocation density through X-ray diffraction rocking curves

Yimeng Song, Yang Jiang, Wenxin Wang, 2020 .

Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes

Yimeng Song, Z. Deng, Yang Jiang, 2020 .

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

Yang Jiang, Wenxin Wang, H. Jia, 2015, Scientific Reports.

A novel wavelength-adjusting method in InGaN-based light-emitting diodes

Yang Jiang, Wenxin Wang, Hong Chen, 2013, Scientific Reports.

Surface ordering of the molecular beam epitaxially grown GaAs(001)‐2×4‐As reconstruction

T. Hashizume, Q. Xue, T. Sakurai, 1994 .

Quantum transport in the coupled multichannel case

W. Cheng, J. Mao, Jun-ming Zhou, 1993 .

Photoluminescence intensity of InGaAs/GaAs Strained quantum wells under high magnetic fields

S. Takeyama, Y. Aoyagi, Y. Segawa, 1990 .

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Z. Deng, Yang Jiang, Wenxin Wang, 2015, Scientific Reports.

Improved thermal stability of wet-oxidized AlAs

Junming Zhou, Haiqiang Jia, Weike Wang, 2002 .

High conversion efficiency of second-harmonic generation in step quantum wells

Dafu Cui, Junming Zhou, Zhenghao Chen, 1992 .

The determination of the band offset of multi-quantum wells by magneto-optical measurements

S. Namba, Y. Aoyagi, Y. Segawa, 1990 .

The theory and experiment of very-long-wavelength 256×1 GaAs/AlxGa1−xAs quantum well infrared detector linear arrays

Junming Zhou, Qi Huang, Wei Lu, 2008 .

InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

Lin Guo, Wenxin Wang, X. Shang, 2006 .

MECHANISM OF DIFFERENT ORIENTATION OF CDTE ON GAAS BY MOLECULAR BEAM EPITAXY

Jun-ming Zhou, J. Yin, Q. Huang, 1996 .

Buffer influence on AlSb/InAs/AlSb quantum wells

Wenxin Wang, Zhongwei Jiang, Hong Chen, 2007 .

Effect of growth temperature on the orientation of CdTe on GaAs prepared by molecular beam epitaxy

Jun-ming Zhou, Q. Huang, Jingjiang Yin, 1997 .

Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering

Zheng-hao Chen, M. Loy, Xudong Xiao, 1996 .

Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate

Liwei Guo, D. Teng, Qiming Wang, 1999 .

Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors*

Yang Jiang, Wenxin Wang, Hong Chen, 2016 .

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Liwei Guo, Hong Chen, H. Jia, 2010 .

One-dimensional to one-dimensional electron resonant tunneling in a double asymmetric quantum-wire structure

Yongqiang Wang, Jun-ming Zhou, Q. Huang, 1999 .

Calculation of subband breadth of GaAs/AlGaAs superlattice

Jian Zhang, Li-jun He, Junming Zhou, 2006 .

Electron reflection at an interface and its effect on electron states in a multi-quantum well structure

A. Xing, Xing-kui Cheng, J. Lian, 2003 .

CHARACTERIZATION OF INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY TRANSMISSION ELECTRON-MICROSCOPY AND CONVERGENT BEAM ELECTRON-DIFFRACTION

K. Fung, W. Feng, Jun-ming Zhou, 1992 .

Micro-bands arising from reflection and interference of electrons at interfaces of superlattices

Jian Zhang, Xing-kui Cheng, Hua Li, 2006 .

Observation of Wannier–Stark ladders in multi-quantum well structures

Xing-kui Cheng, Jun-ming Zhou, Q. Huang, 2005 .

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

Yang Jiang, Hong Chen, Chunhua Du, 2014 .

The role of impurity scattering in the quantum waveguide

J. Mao, Y. Huang, Jun-ming Zhou, 1993 .

Improvement on InGaN‐based light emitting diodes using p‐GaN layer grown at low temperature in full N2 environment

Yang Jiang, Hong Chen, H. Jia, 2014 .

Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type

Yang Jiang, Wenxin Wang, H. Jia, 2017 .

Indium segregation measured in InGaN quantum well layer

W. Lu, Wei Li, Yang Jiang, 2014, Scientific Reports.

Normal incidence photoresponse in GaAs/AlGaAs quantum well infrared photodetector

D. Cui, Zheng-hao Chen, Yue-liang Zhou, 1995 .

Influence of AlN Buffer on Phase Structure of GaN on GaAs (001) Grown by Radio-Frequency Molecular Beam Epitaxy

Manhong Zhang, Hongfei Liu, Hong Chen, 2000 .

Fabrication of Patterned Sapphire Substrate by Wet Chemical Etching for Maskless Lateral Overgrowth of GaN

H. Jia, Junming Zhou, Wanyun Li, 2006 .

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Yang Jiang, Wenxin Wang, Hong Chen, 2016 .

A novel method to reduce the period limitation in laser interference lithography

Yang Jiang, Wenxin Wang, H. Jia, 2015 .

A new initial growth method for pure cubic GaN on GaAs(001)

Hongfei Liu, Hong Chen, Zhiqiang Li, 1999 .

Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

H. Makino, Pingping Chen, Zhifeng Li, 2003 .

The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

Yimeng Song, Yang Jiang, Wenxin Wang, 2020, Materials Research Express.

Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation

X. Ren, Hui Huang, Qiming Wang, 2000 .

Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m

Liping Luo, Hongjie Wang, Chenglu Lin, 2000 .

Characteristics of GaN grown on 6H-SiC with different AlN buffers

Jia Haiqiang, H. Jia, P. Xu, 2010 .