S. Kakimoto

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

M. Koba, J. Kudo, A. Seki, 1987 .

Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1 µm Gate Electrode

Seizo Kakimoto, Hiroshi Kotaki, H. Kotaki, 1998 .

Novel contamination restrained silicidation processing using load-lock LPCVD-films and lightly doped deep drain (LD/sup 3/) structure for deep submicron dual gate CMOS

Y. Sato, K. Uda, S. Kakimoto, 1995, Proceedings of International Electron Devices Meeting.

Rhombohedral prussian white as cathode for rechargeable sodium-ion batteries.

Motoaki Nishijima, Yi-De Chuang, John B Goodenough, 2015, Journal of the American Chemical Society.

Hot-carrier-induced degradation of N/sub 2/O-oxynitrided gate oxide NMOSFETs

Toshimasa Matsuoka, Kenji Taniguchi, Chihiro Hamaguchi, 1996 .

Rhombohedral prussian white as cathode for rechargeable sodium-ion batteries.

J. Goodenough, Xin Zhao, R. Qiao, 2015, Journal of the American Chemical Society.

Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction

H. Kotaki, N. Hashizume, S. Kakimoto, 1999 .

arrier-In uced Degradation of itrided Gate Oxide NMOSFET' s

K. Taniguchi, C. Hamaguchi, T. Matsuoka, 1996 .