R. Rongen

发表

Surface morphology of InP/GaInAs in selective area growth by chemical beam epitaxy

C. Vreeburg, Y. Oei, M. Leys, 1997 .

HETEROGENEOUS HYDRIDE PYROLYSIS IN A CHEMICAL BEAM EPITAXY CRACKER CELL AND GROWTH OF HIGH QUALITY INP

M. Leys, J. Wolter, H. Vonk, 1997 .

Effects of tensile strain and substrate off-orientation on the growth of {GaInAs}/{InP} multiple quantum well structures by CBE

M. Leys, F. Tichelaar, J. Wolter, 1997 .

Chemical beam epitaxy of GaxIn1-xAs/InP multiple layer structures

R. Rongen, 1996 .

Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE

M. Leys, F. Tichelaar, J. Wolter, 1997 .

Substitution of InP layers to InAs for strain compensation in GaxLn1-xAs/InP superlattices

Y. Oei, M. Leys, J. Wolter, 1996 .

Morphology of homo-epitaxial vicinal (100) III-V surfaces

M. Leys, J. Wolter, C. Verschuren, 1999 .

Loss-reduction of deeply etched InP/InGaAsP waveguides by CBE regrowth

C. Vreeburg, Y. Oei, J. Pedersen, 1996 .

Elemental magnesium as p-type dopant in InP grown by Chemical Beam Epitaxy

J. Wolter, C. Verschuren, H. Vonk, 1999 .

Some kinetic aspects of Chemical Beam Epitaxy

J. Wolter, C. Verschuren, H. Vonk, 1999 .

Investigations on indium phosphide grown by chemical beam epitaxy

M. Leys, J. H. Wolter, H. Vonk, 1995 .

Interface manipulation in GaxIn1-xAs/InP multiple layer structures grown by chemical beam epitaxy

M. Leys, J. Wolter, H. Vonk, 1997 .