Stéphane Lefebvre

Stéphane Lefebvre, Frédéric Richardeau, François Boige, 2018, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Stéphane Lefebvre, Zoubir Khatir, F. Saint-Eve, 2007, Microelectron. Reliab..

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting

Dejan Vasic, Stéphane Lefebvre, Yi Tian, 2012, 2012 IEEE International Symposium on Industrial Electronics.

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Stéphane Lefebvre, Denis Labrousse, C. Gautier, 2016, Microelectron. Reliab..

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications

Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, 2013, Microelectron. Reliab..

Estimation of SiC JFET temperature during short-circuit operations

Mounira Berkani, Stéphane Lefebvre, Ali Haddouche, 2009, Microelectron. Reliab..

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Stéphane Lefebvre, S. Bontemps, S. Pietranico, 2011, Microelectron. Reliab..

Characterisation of power modules ceramic substrates for reliability aspects

Stéphane Lefebvre, Zoubir Khatir, S. Bontemps, 2009, Microelectron. Reliab..

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Stéphane Lefebvre, Frédéric Richardeau, F. Boige, 2017, Microelectron. Reliab..

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2018, Microelectron. Reliab..

Faults Detection and Diagnosis in a Static Converter

Mohamed Benbouzid, Demba Diallo, Stéphane Lefebvre, 2011 .

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

Mounira Berkani, Stéphane Lefebvre, Frédéric Richardeau, 2011, IEEE Transactions on Industrial Electronics.

Effect of short circuit aging on safe operating area of SiC MOSFET

Stéphane Lefebvre, Stephane Azzopardi, Tien Anh Nguyen, 2018, Microelectron. Reliab..

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Mounira Berkani, Stéphane Lefebvre, Pascal Dherbecourt, 2014 .

Aluminum metallization and wire bonding aging in power MOSFET modules

Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, 2018 .

Using Laminated Metal Foam as the Top-Side Contact of a PCB-Embedded Power Die

Stéphane Lefebvre, François Costa, Yoann Pascal, 2017, IEEE Electron Device Letters.

Evaluation of Substrate Technologies under High Temperature Cycling

Laurent Dupont, Stéphane Lefebvre, Zoubir Khatir, 2006 .

Estimation of a surface current distribution from 2D magnetic field measurements

Stéphane Lefebvre, Tien Anh Nguyen, G. Chaplier, 2011 .

Power Loss Estimation in SiC Power BJTs

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2014 .

Robustness in short-circuit Mode of SiC MOSFETs

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2015 .